STS5N15M3 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh™ III Power MOSFET

STS5N15M3
N-channel 150 V, 45 mΩ, 5 A, SO-8
ultra low gate charge MDmesh™ III Power MOSFET
Features
Type
STS5N15M3
V_DSS
150 V
R_DS(on)
max
I_D
< 0.057 Ω 5 A
■ Low on-resistance
■ Low input capacitance and gate charge
SO-8
■ Low gate input resistance
t(s) ^{■ High dv/dt avalanche capabilities}
uc ^Application
rod ^{■ Switching applications}
P _Description
lete ^{This device is realized with the third generation of}
o MDmesh™ technology. This Power MOSFET
s _{associates an improved vertical structure to the}
b _{company’s strip layout to yield one of the world’s}
O _{lowest on-resistance and gate charge. It is}
- _{therefore suitable for the most demanding high}
t(s) ^{efficiency converters.}
Figure 1. Internal schematic diagram
te ^{Produc Table 1. Device summary}
le ^{Order code}
Obso^STS5N15M3
Marking
5R15-
Package
SO-8
Packaging
Tape and reel
June 2008
Rev 2
1/12
www.st.com
12