STS4PF20V Datasheet, PDF (1/8 Pages) STMicroelectronics – P-CHANNEL 20V - 0.090 ohm - 4A SO- 2.7V-DRIVE STripFET™ II POWER MOSFET

STS4PF20V
P-CHANNEL 20V - 0.090 Ω - 4A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STS4PF20V
20 V
< 0.11 Ω ( @ 4.5 V )
< 0.135 Ω ( @ 2.7 V )
4A
s TYPICAL R_DS(on) = 0.090 Ω @ 4.5 V
s TYPICAL R_DS(on) = 0.100 Ω @ 2.7 V
s ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s MOBILE PHONE APPLICATIONS
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
(•) Pulse width limited by safe operating area.
June 2002
.
Value
Unit
20
V
20
V
± 12
V
4
A
2.5
A
16
A
2.5
W
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
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