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| STS4DPFS30L Datasheet, PDF (1/8 Pages) STMicroelectronics – P-CHANNEL 30V - 0.07ohm - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER | |||
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STS4DPFS30L
P-CHANNEL 30V - 0.07⦠- 4A SO-8
STripFET⢠MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
30 V < 0.08 â¦
SCHOTTKY
IF(AV)
VRRM
3A
30 V
ID
4A
VF(MAX)
0.51 V
DESCRIPTION
This product associates the latest low voltage
STripFET⢠in p-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Value
30
30
± 20
4
3.4
16
1.6
Unit
V
V
V
A
A
A
W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
IF(AV)
Average Forward Current
IFSM
Surge Non Repetitive Forward Current
IRRM
Repetitive Peak Reverse Current
IRSM
Non Repetitive Peak Reverse Current
dv/dt
Critical Rate Of Rise Of Reverse Voltage
October 2000
Value
Unit
30
V
20
A
TL = 125°C
3
A
δ = 0.5
tp = 10 ms
75
A
Sinusoidal
tp = 2 µs
1
A
F = 1 kHz
tp = 100 µs
1
A
Note:
For
the
P-CHANNEL
1M0O0S0F0ET actual polarity of
and current has to be
rVeVovl/etµarsgseeds
1/8
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