STS4DPF30L Datasheet, PDF (1/6 Pages) STMicroelectronics – DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET™ POWER MOSFET

STS4DPF30L
DUAL P-CHANNEL 30V - 0.07 Ω - 4A SO-8
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STS4DPF30L
30 V
<0.08 Ω
4A
s TYPICAL R_DS(on) = 0.07 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN CELLULAR
PHONES
s DC-DC CONVERTER
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V_DS Drain-source Voltage (V_GS = 0)
30
V
V_DGR Drain-gate Voltage (R_GS = 20 kΩ)
30
V
V_GS Gate- source Voltage
± 16
V
I_D
Drain Current (continuous) at T_C = 25°C Single Operation
Drain Current (continuous) at T_C = 100°C Single Operation
4
2.5
A
A
I_DM(•) Drain Current (pulsed)
16
A
P_tot
Total Dissipation at T_C = 25°C Dual Operation
Total Dissipation at T_C = 25°C Single Operation
(•) Pulse width limited by safe operating area.
2.0
W
1.6
W
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
April 2002
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.