STS4DPF20L Datasheet, PDF (1/8 Pages) STMicroelectronics – DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFET™ POWER MOSFET

STS4DPF20L
DUAL P-CHANNEL 20V - 0.07 Ω - 4A SO-8
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STS4DPF20L
20 V
<0.08 Ω
4A
s TYPICAL R_DS(on) = 0.07 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN CELLULAR
PHONES
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V_DS
Drain-source Voltage (V_GS = 0)
20
V
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
20
V
V_GS
Gate- source Voltage
± 16
V
I_D
Drain Current (continuos) at T_C = 25°C Single Operation
Drain Current (continuos) at T_C = 100°C Single Operation
4
2.5
A
A
I_DM(•)
Drain Current (pulsed)
16
A
P_tot
Total Dissipation at T_C = 25°C Dual Operation
Total Dissipation at T_C = 25°C Single Operation
1.6
W
2
W
(•) Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
February 2002
1/8
.