STS4DNF30L Datasheet, PDF (1/6 Pages) STMicroelectronics – DUAL N-CHANNEL 30V - 0.039ohm - 4A SO-8 STripFET™ POWER MOSFET

STS4DNF30L
DUAL N-CHANNEL 30V - 0.039Ω - 4A SO-8
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STS4DNF30L
30 V < 0.050 Ω 4 A
s TYPICAL R_DS(on) = 0.039 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGMENT IN CELLULAR PHONES
s DC MOTOR DRIVE
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C Dual Operation
(q)Pulse width limited by safe operating area_.
August 2002
Value
30
30
± 16
4
2.5
16
2
Unit
V
V
V
A
A
A
W
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