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| STS3DPFS45 Datasheet, PDF (1/8 Pages) STMicroelectronics – P-CHANNEL 45V - 0.080 ohm - 3A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER | |||
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STS3DPFS45
P-CHANNEL 45V - 0.080 ⦠- 3A SO-8
STripFET⢠MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
45 V
< 0.11 â¦
SCHOTTKY
IF(AV)
VRRM
3A
45 V
ID
3A
VF(MAX)
0.51 V
DESCRIPTION
This product associates the latest low voltage
StripFETÅ in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Dain-source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20 kâ¦)
VGS Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM(â¢) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Value
45
45
± 16
3
1.9
12
2
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VRRM Repetitive Peak Reverse Voltage
45
IF(RMS) RMS Forward Curren
20
IF(AV) Average Forward Current
TL=125 oC
δ =0.5
3
IFSM
Surge Non Repetitive Forward Current
tp= 10 ms
Sinusoidal
75
IRRM Repetitive Peak Reverse Current
tp=2 µs
F=1 kHz
1
IRSM Non Repetitive Peak Reverse Current tp=100 µs
1
dv/dt Critical Rate Of Rise Of Reverse Voltage
10000
(â¢) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
February 2002
.
Unit
V
V
V
A
A
A
W
Unit
V
A
A
A
A
A
V/µs
1/8
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