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| STS3DPFS40 Datasheet, PDF (1/6 Pages) STMicroelectronics – P-CHANNEL 40V - 0.070ohm - 3A SO-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER | |||
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STS3DPFS40
P-CHANNEL 40V - 0.070⦠- 3A SO-8
STripFET⢠MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
M OSFE T
VDSS
RDS(on)
40 V
< 0.1 â¦
SCHOTTKY
IF(AV)
VRRM
3A
40 V
ID
3A
VF(MAX)
0.51 V
DESCRIPTION
This product associates the latest low voltage
STripFET⢠in p-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Value
Unit
40
V
40
V
± 16
V
3
A
1.9
A
12
A
2
W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM
Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
IF(AV)
Average Forward Current
IFSM
Surge Non Repetitive Forward Current
IRRM
Repetitive Peak Reverse Current
IRSM
Non Repetitive Peak Reverse Current
dv/dt
Critical Rate Of Rise Of Reverse Voltage
(â¢)Pulse width limited by safe operating area
November 2000
Value
Unit
40
V
20
A
TL = 125°C
3
A
δ = 0.5
tp = 10 ms
75
A
Sinusoidal
tp = 2 µs
1
A
F = 1kHz
tp = 100 µs
1
A
10000
V/µs
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
1/6
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