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| STS3DPFS30 Datasheet, PDF (1/5 Pages) STMicroelectronics – P - CHANNEL 30V - 0.065ohm - 3A - S0-8 STripFETO MOSFET PLUS SCHOTTKY RECTIFIER | |||
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STS3DPFS30
STripFETâ¢
P - CHANNEL 30V - 0.065⦠- 3A - S0-8
MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
30V
0.09â¦
SCHOTTKY
IF(AV)
VRRM
3A
30V
ID
3A
VF(MAX)
0.51V
DESCRIPTION:
This product associates the latest low voltage
StripFET⢠in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kâ¦)
VGS Gate-source Voltage
ID
Drain Current (continuous) at Tc = 25 oC
ID
Drain Current (continuous) at Tc = 100 oC
IDM(â¢)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
IF(AV) Average Forward Current
IFSM Surge Non Repetitive Forward Current
IRRM Repetitive Peak Reverse Current
TL=125 oC
δ =0.5
tp= 10 ms
Sinusoidal
tp=2 µs
F=1 kHz
IRSM Non Repetitive Peak Reverse Current
tp=100 µs
dv/dt Critical Rate Of Rise Of Reverse Voltage
(â¢) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
February 1999
Value
30
30
± 20
3
1.9
12
2
Value
30
20
3
75
1
1
10000
Unit
V
V
V
A
A
A
W
Unit
V
A
A
A
A
A
V/µs
1/5
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