STS3DPF20V Datasheet, PDF (1/8 Pages) STMicroelectronics – DUAL P-CHANNEL 20V - 0.090 ohm - 3A SO-8 STripFET™ POWER MOSFET

STS3DPF20V
DUAL P-CHANNEL 20V - 0.090 Ω - 3A SO-8
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STS3DPF20L
20 V
<0.11 Ω
3A
s TYPICAL R_DS(on) = 0.090 Ω @ 4.5 V
s TYPICAL R_DS(on) = 0.1 Ω @ 2.7 V
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s MOBILE PHONE APPLICATIONS
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V_DS
Drain-source Voltage (V_GS = 0)
20
V
V_DGR Drain-gate Voltage (R_GS = 20 kΩ)
20
V
V_GS
Gate- source Voltage
± 12
V
I_D
Drain Current (continuous) at T_C = 25°C Single Operation
Drain Current (continuous) at T_C = 100°C Single Operation
3
1.9
A
A
I_DM(•) Drain Current (pulsed)
12
A
P_tot
Total Dissipation at T_C = 25°C Dual Operation
Total Dissipation at T_C = 25°C Single Operation
1.6
W
2
W
(•) Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
June 2002
1/8
.