STS3C3F30L Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFET™ II POWER MOSFET

STS3C3F30L
N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8
P-CHANNEL 30V - 0.140 Ω - 3A SO-8
STripFET™ II POWER MOSFET
TYPE
V_DSS R_DS(on)
I_D
STS3C3F30L(N-Channel) 30 V < 65 mΩ 3.5 A
STS3C3F30L(P-Channel) 30 V < 165 mΩ 3 A
s TYPICAL R_DS(on) (N-Channel) = 50 mΩ
s TYPICAL R_DS(on) (P-Channel) = 140 mΩ
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This application specific Power MOSFET is the second
generation of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor
shows extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufacturing re-
producibility.
APPLICATIONS
s DC/DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN CELLULAR
PHONES
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
N-CHANNEL
P-CHANNEL
Unit
V_DS
Drain-source Voltage (V_GS = 0)
30
V
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
30
V
V_GS
Gate- source Voltage
± 16
V
I_D
Drain Current (continuos) at T_C = 25°C
Single Operating
3.5
2.7
A
I_D
Drain Current (continuos) at T_C = 100°C
Single Operating
2.2
1.7
A
I_DM(•)
Drain Current (pulsed)
14
11
A
P_tot
Total Dissipation at T_C = 25°C Dual Operating
Total Dissipation at T_C = 25°C Single Operating
1.6
2
W
W
T_stg
Storage Temperature
-60 to 150
°C
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
150
°C
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
February 2002
.
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