STS3C2F100 Datasheet, PDF (1/11 Pages) STMicroelectronics – COMPLEMENTARY PAIR STripFETTM POWER MOSFET

STS3C2F100
N-CHANNEL 100V - 0.110 Ω - 3A SO-8
P-CHANNEL 100V - 0.320 Ω - 1.5A SO-8
COMPLEMENTARY PAIR STripFET™ POWER MOSFET
TYPE
V_DSS R_DS(on)
I_D
STS3C2F100(N-Channel) 100 V < 0.145Ω 3.0 A
STS3C2F100(P-Channel) 100 V < 0.380Ω 1.5 A
■ TYPICAL R_DS(on) (N-Channel) = 0.110 Ω
■ TYPICAL R_DS(on) (P-Channel) = 0.320 Ω
■ STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
■ ULTRA LOW GATE CHARGE
■ ULTRA LOW ON-RESISTANCE
DESCRIPTION
This MOSFET is the second generation of STMicroelec-
tronis unique "Single Feature Size™" strip-based pro-
cess. The resulting transistor shows extremely high
packing density for low on-resistance, rugged avalanche
characteristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR DRIVES
■ AUDIO AMPLIFIER
SO-8
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STS3C2F100
MARKING
S3C2F100
PACKAGE
SO-8
PACKAGING
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
June 2004
.
N-CHANNEL
P-CHANNEL
Unit
100
V
100
V
± 20
V
3.0
1.5
A
1.9
1.0
A
12
6
A
2
W
-55 to 150
°C
150
°C
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
Rev.1.0.1
1/11