STS2NF100 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 100V - 0.23 ohm - 6A SO-8 STripFET™ II POWER MOSFET

STS2NF100
N-CHANNEL 100V - 0.23 Ω - 6A SO-8
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STS2NF100
100 V <0.26 Ω
6A
s TYPICAL R_DS(on) = 0.23 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(•)
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(••) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dV/dt (1) Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(••) Pulse width limited by safe operating area.
(•) Current limited by the package
October 2002
.
Value
100
100
± 20
2
1.3
8
2.5
0.016
40
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-65 to 175
°C
(1) ISD ≤2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting T_j = 25 ^oC, I_D = 3A, V_DD = 50V
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