STS2DPF80 Datasheet, PDF (1/9 Pages) STMicroelectronics – DUAL P-CHANNEL 80V - 0.21 Ohm - 2.3A SO-8

STS2DPF80
DUAL P-CHANNEL 80V - 0.21 Ω - 2.3A SO-8
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STS2DPF80
80 V
<0.25 Ω
2.3 A
■ TYPICAL R_DS(on) = 0.21 Ω
■ STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This application specific Power MOSFET is the
second generation of STMicroelectronis unique
"Single Feature Size™" strip-based process. The
resulting transistor shows extremely high packing
density for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing reproduc-
ibility.
APPLICATIONS
■ DC/DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN CELLULAR
PHONES AND DISPLAY NEW GENERATION
SO-8
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STS8DPF80
MARKING
S8DPF80
PACKAGE
SO-8
PACKAGING
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V_DS Drain-source Voltage (V_GS = 0)
80
V
V_DGR Drain-gate Voltage (R_GS = 20 kΩ)
80
V
V_GS Gate- source Voltage
± 20
V
I_D
Drain Current (continuous) at T_C = 25°C Single Operation
Drain Current (continuous) at T_C = 100°C Single Operation
2.0
1.3
A
A
I_DM(•) Drain Current (pulsed)
8
A
P_tot Total Dissipation at T_C = 25°C
2.5
W
T_stg Storage Temperature
-55 to 150
°C
T_j
Max. Operating Junction Temperature
150
°C
(•) Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
June 2004
Rev.0.1
1/9