STS2DPF20V Datasheet, PDF (1/6 Pages) STMicroelectronics – DUAL P-CHANNEL 20V - 0.14ohm - 2A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET

STS2DPF20V
DUAL P-CHANNEL 20V - 0.14Ω - 2A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STS2DPF20V
20 V
<0.20Ω (@4.5V)
<0.25Ω (@2.7V)
2A
s TYPICAL R_DS(on) = 0.14Ω (@4.5V)
s TYPICAL R_DS(on) = 0.2Ω (@2.7V)
s ULTRA LOW THRESHOLD GATE DRIVE (2.7V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
SO-8
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGMENT IN CELLULAR PHONES
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V_DS
Drain-source Voltage (V_GS = 0)
20
V
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
20
V
V_GS
Gate- source Voltage
± 12
V
I_D
Drain Current (continuos) at T_C = 25°C Single Operation
2
A
Drain Current (continuos) at T_C = 100°C Single Operation
1.26
A
I_DM (q) Drain Current (pulsed)
8
A
P_TOT
Total Dissipation at T_C = 25°C Dual Operation
Total Dissipation at T_C = 25°C Single Operation
1.6
W
2
W
(q)Pulse width limited by safe operating area_.
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
August 2001
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