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| STS2DNFS30L Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 30V - 0.09ohm - 3A SO-8 STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER | |||
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STS2DNFS30L
N-CHANNEL 30V - 0.09⦠- 3A SO-8
STripFET⢠II MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
30 V
< 0.11 â¦
SCHOTTKY
IF(AV)
VRRM
1A
30 V
ID
3A
VF(MAX)
0.46 V
DESCRIPTION
This product associates the latest low voltage
STripFET⢠in n-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
IF(AV)
Average Forward Current
IFSM
Surge Non Repetitive Forward Current
IRSM
dv/dt
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
(â¢)Pulse width limited by safe operating area
August 2001
TL = 135°C
δ = 0.5
tp = 10 ms
Sinusoidal
tp = 100 µs
Value
30
30
± 15
3
1.9
12
2
Value
30
7
1
45
1
10000
Unit
V
V
V
A
A
A
W
Unit
V
A
A
A
A
V/µs
1/6
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