STS2DNE60 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 60V - 0.180ohm - 2A SO-8 STripFET POWER MOSFET

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STS2DNE60
N - CHANNEL 60V - 0.180Ω - 2A SO-8
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STS2DNE60
60 V < 0.23 Ω
2A
s TYPICAL RDS(on) = 0.18 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
PRELIMINARY DATA
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size™ " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
SO-8
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Single Operation
Drain Current (continuous) at Tc = 100 ^oC
Single Operation
I_DM(•)
P_tot
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC Dual Operation
Total Dissipation at Tc = 25 ^oC Sinlge Operation
October 1999
Value
60
60
± 20
2
1.3
8
2
1.6
Unit
V
V
V
A
A
A
W
W
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