STS20N3LLH6 Datasheet, PDF (1/13 Pages) STMicroelectronics – Low gate drive power losses

STS20N3LLH6
N-channel 30 V, 0.004 Ω, 20 A, SO-8
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
V_DSS
R_DS(on)
max
I_D
STS20N3LLH6
30 V 0.0047 Ω 20 A
t(s) ^{■ R}DS(on) ^{* Q}g ^{industry benchmark}
uc ^{■ Extremely low on-resistance RDS(on)}
d _{■ High avalanche ruggedness}
ro _{■ Low gate drive power losses}
P _{■ Very low switching gate charge}
lete _Application
so _{■ Switching applications}
- ^Ob _Description
t(s) ^{This product utilizes the 6th generation of design}
rules of ST’s proprietary STripFET™ technology,
uc ^{with a new gate structure.The resulting Power}
d MOSFET exhibits the lowest R_DS(on) in all
Obsolete ^{Pro packages.}
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STS20N3LLH6
Marking
20G3L
Package
SO-8
Packaging
Tape and reel
March 2010
Doc ID 15528 Rev 2
1/13
www.st.com
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