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STS1NC60 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 600V - 12ohm - 0.3A - SO-8 PowerMESH™II MOSFET | |||
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STS1NC60
N-CHANNEL 600V - 12⦠- 0.3A - SO-8
PowerMESHâ¢II MOSFET
TYPE
VDSS
RDS(on)
ID
STS1NC60
600 V
< 15 â¦
0.3 A
s TYPICAL RDS(on) = 12â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHâ¢II is the evolution of the first
generation of MESH OVERLAYâ¢. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s AC ADAPTORS AND BATTERY CHARGERS
s SWITH MODE POWER SUPPLIES (SMPS)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
.
July 2001
Value
Unit
600
V
600
V
±30
V
0.3
A
0.18
A
1.2
A
2.5
W
0.02
W/°C
3
V/ns
â60 to 150
°C
150
°C
(1)ISD â¤0.3A, di/dt â¤100A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
1/8
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