STS1HNC60 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh™II MOSFET

STS1HNC60
N-CHANNEL 600V - 7Ω - 0.4A SO-8
PowerMesh™II MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STS1HNC60
600 V
<8Ω
0.36 A
s TYPICAL R_DS(on) = 7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™II
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE LOW POWER SUPPIES
(SMPS)
s CFL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
July 2001
Value
Unit
600
V
600
V
± 30
V
0.36
A
0.22
A
1.44
A
2.5
W
0.028
W/°C
3.5
V/ns
–65 to 150
°C
150
°C
(1)I_SD ≤ 0.36 A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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