STS1DNC45 Datasheet, PDF (1/8 Pages) STMicroelectronics – DUAL N-CHANNEL 450V - 4.1ohm - 0.4A SO-8 SuperMESH™ POWER MOSFET

STS1DNC45
DUAL N-CHANNEL 450V - 4.1Ω - 0.4A SO-8
SuperMESH™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STS1DNC45 450 V
< 4.5 Ω
0.4 A
s TYPICAL R_DS(on) = 4.1Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s GATE CHARGE MINIMIZED
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
s SWITCH MODE LOW POWER SUPPLIES
(SMPS)
s DC-DC CONVERTERS
s LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS)
s LOW POWER BATTERY CHARGERS
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V_DS
Drain-source Voltage (V_GS = 0)
450
V
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
450
V
V_GS
Gate- source Voltage
± 30
V
I_D
Drain Current (continuous) at T_C = 25°C
Drain Current (continuous) at T_C = 100°C
0.40
A
0.25
A
I_DM ( ) Drain Current (pulsed)
1.6
A
P_TOT
Total Dissipation at T_C = 25°C Dual Operation
Total Dissipation at T_C = 25°C Single Operation
1.6
W
2
W
dv/dt(1) Peak Diode Recovery voltage slope
3
V/ns
(q) Pulse width limited by safe operating area
(1)I_SD ≤ 0.4 A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
June 2003
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