STS1C1S250 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET

STS1C1S250
N-CHANNEL 250V - 0.9Ω - 0.75A SO-8
P-CHANNEL 250V - 2.1Ω - 0.6A SO-8
MESH OVERLAY POWER MOSFET
TYPE
V_DSS R_DS(on)
I_D
STS1C1S250(N-Channel)
STS1C1S250(P-Channel)
250 V
250 V
<1.4Ω 0.80 A
<2.8Ω 0.60 A
s TYPICAL R_DS(on) (N-Channel) = 0.9 Ω
s TYPICAL R_DS(on) (P-Channel) = 2.1 Ω
s GATE-SOURCE ZENER DIODE
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
SO-8
DESCRIPTION
This complementary pair uses the Company's pro-
prietary high voltage MESH OVERLAY™ process
based on advanced strip layout and efficient edge
termination. Designed for high volume manufactur-
ing capability, it is ideal in lighting converters such as
CFL supplied from 120V mains.
APPLICATIONS
s LIGHTING
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM (1) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C Single Operation
Total Dissipation at T_C = 25°C Dual Operation
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(1)Pulse width limited by safe operating area
October 2003
Value
Unit
N-CHANNEL
P-CHANNEL
250
250
V
250
250
V
±25
V
0.75
0.60
A
0.47
0.38
A
3
2.4
A
1.6
2
W
–65 to 150
°C
150
°C
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