STS19N3LLH6 Datasheet, PDF (1/14 Pages) STMicroelectronics – High avalanche ruggedness

STS19N3LLH6
N-channel 30 V, 0.0049 Ω, 19 A, SO-8
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
STS19N3LLH6
V_DSS
30 V
R_DS(on)
max
0.0056 Ω
I_D
19 A
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
■ Very low switching gate charge
Applications
■ Switching applications
Description
This product utilizes the 6^th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
8 ^{76 5}
1 ^{2 34}
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STS19N3LLH6
Marking
19G3L
Package
SO-8
Packaging
Tape and reel
July 2011
Doc ID 019031 Rev 1
1/14
www.st.com
14