STS13N3LLH5 Datasheet, PDF (1/12 Pages) STMicroelectronics – High avalanche ruggedness

STS13N3LLH5
N-channel 30 V, 0.006 Ω , 13 A, SO-8
STripFET™ V Power MOSFET
Features
Type
STS13N3LLH5
V_DSS
30 V
R_DS(on)
I_D
<0.0066 Ω 13 A ⁽¹⁾
1. The value is rated according to R_thj-pcb.
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Applications
■ Switching applications
Description
This product is an N-channel Power MOSFET that
utilizes the 5^th generation of design rules for ST’s
proprietary STripFET™ technology. The lowest
available R_DS(on)* Q_g, in SO-8 package, makes
this device suitable for the most demanding DC-
DC converter applications, where high power
density is to be achieved.
5
8
4
1
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STS13N3LLH5
Marking
13D3L
Package
SO-8
Packaging
Tape and reel
June 2011
Doc ID 018965 Rev 1
1/12
www.st.com
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