STS12N3LLH5 Datasheet, PDF (1/13 Pages) STMicroelectronics – This device is an N-channel Power

STS12N3LLH5
Features
N-channel 30 V, 0.0068 Ω, 12 A, SO-8
STripFET™ V Power MOSFET
Datasheet — production data
Type
STS12N3LLH5
V_DSS
30 V
R_DS(on)
max
< 0.0075 Ω
I_D
12 A ⁽¹⁾
1. The value is rated according R_thj-pcb
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
5
8
4
1
SO-8
Application
■ Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’
STripFET™V technology. The device has been
optimized to achieve very low on-state resistance,
contributing to an FOM that is among the best in
its class.
Table 1. Device summary
Order code
STS12N3LLH5
Marking
12D3L
Package
SO-8
Packaging
Tape and reel
June 2012
This is information on a product in full production.
Doc ID 17152 Rev 3
1/13
www.st.com
13