STS11N3LLH5 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 30 V, 0.0117 Ω, 11 A, SO-8 STripFET™ V Power MOSFET

STS11N3LLH5
N-channel 30 V, 0.0117 Ω, 11 A, SO-8
STripFET™ V Power MOSFET
Features
Type
STS11N3LLH5
V_DSS
30 V
R_DS(on)
max
< 0.0132 Ω
I_D
11 A ⁽¹⁾
1. The value is rated according R_thj-pcb
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics'
STripFET™V technology. The device has been
optimized to achieve very low on-state resistance,
contributing to an FOM that is among the best in
its class..
5
8
4
1
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STS11N3LLH5
Marking
11D3L
Package
SO-8
Packaging
Tape and reel
June 2011
Doc ID 15982 Rev 2
1/12
www.st.com
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