STS10P4LLF6 Datasheet, PDF (1/14 Pages) STMicroelectronics – Very low on-resistance

STS10P4LLF6
P-channel 40 V, 0.0125 Ω typ., 10 A, StripFET™ F6
Power MOSFET in SO-8 package
Datasheet - production data
Figure 1: Internal schematic diagram
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Table 1: Device summary
Order code Marking Package Packaging
STS10P4LLF6 10K4L
SO-8
Tape and
reel
For the P-channel MOSFET actual polarity
of voltages and current have to be reversed
Features
Order code
STS10P4LLF6
VDS
40 V
RDS(on) max.
0.015
ID
10 A
December 2014
DocID025774 Rev 3
This is information on a product in full production.
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