STS10P3LLH6 Datasheet, PDF (1/12 Pages) STMicroelectronics – High avalanche ruggedness

STS10P3LLH6
P-channel -30 V, 0.01 Ω typ., -12.5 A, STripFET™ H6
Power MOSFET in an SO-8 package
Datasheet - production data
4
1
SO - 8
Figure 1: Internal schematic diagram
Features
Order code
STS10P3LLH6
VDS
-30 V
RDS(on) max
0.012 Ω
ID
-12.5 A
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Order code
STS10P3LLH6
Table 1: Device summary
Marking
Packages
10K3L
SO-8
Packing
Tape and reel
June 2015
DocID025837 Rev 3
This is information on a product in full production.
1/12
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