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STS10N3LH5 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™ V Power MOSFET | |||
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STS10N3LH5
N-channel 30 V, 0.019 â¦, 10 A, SO-8
STripFET⢠V Power MOSFET
Features
Type
VDSS RDS(on) max
ID
STS10N3LH5
30 V
0.021 â¦
10 A
â RDS(on) * Qg industry benchmark
â Extremely low on-resistance RDS(on)
â Very low switching gate charge
â High avalanche ruggedness
â Low gate drive power losses
Application
â Switching applications
Description
This STripFETâ¢V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STS10N3LH5
Marking
10D3L
Package
SO-8
Packaging
Tape and reel
May 2009
Doc ID 15618 Rev 1
1/13
www.st.com
13
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