STS10DN3LH5 Datasheet, PDF (1/13 Pages) STMicroelectronics – Very low switching gate charge

STS10DN3LH5
Dual N-channel 30 V, 0.019 Ω, 10 A, SO-8
STripFET™ V Power MOSFET
Features
Type
V_DSS R_DS(on) max
I_D
STS10DN3LH5 30 V
0.021 Ω
10 A
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STS10DN3LH5
Marking
10DD3L
Package
SO-8
Packaging
Tape and reel
May 2009
Doc ID 15624 Rev 1
1/13
www.st.com
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