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STS01DTP06_06 Datasheet, PDF (1/11 Pages) STMicroelectronics – Dual NPN-PNP complementary Bipolar transistor
STS01DTP06
Dual NPN-PNP complementary Bipolar transistor
General features
VCE(sat)
hFE
IC
0.35V
>100
1A
■ High gain
■ Low VCE(sat)
■ Simplified circuit design
■ Reduced component count
Applications
■ Push-Pull or Totem-Pole configuration
■ MOSFET and IGBT gate driving
■ Motor, relay and solenoid driving
Description
The STS01DTP06 is a Hybrid dual NPN-PNP
complementary power bipolar transistor
manufactured by using the latest low voltage
planar techlogy. The STS01DTP06 is housed in
dual island SO-8 package with separated
terminals for higher assembly flexibility,
specifically recommended to be used in Push-Pull
or Totem Pole configuration as post IGBTs and
MOSFETs driver.
SO-8
Internal schematic diagram
Order codes
Part Number
Marking
STS01DTP06
S01DTP06
Package
SO-8
Packing
Tape & reel
March 2006
Rev 2
1/11
www.st.com
11