STRH8N10 Datasheet, PDF (1/18 Pages) STMicroelectronics – Rad-Hard N-channel 100 V, 6 A Power MOSFET

STRH8N10
Rad-Hard N-channel 100 V, 6 A
Power MOSFET
Features
V_DSS
100 V
I_D
R_DS(on)
6A
0.30 Ω
■ Fast switching
■ 100% avalanche tested
■ Hermetic package
■ 70 krad TID
■ SEE radiation hardened
Q_g
22 nC
Applications
■ Satellite
■ High reliability
Description
This N-channel Power MOSFET is developed with
STMicroelectronics unique STripFET^™ process. It
has specifically been designed to sustain high
TID and provide immunity to heavy ion effects.
TO-39
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
ESCC part Quality
number
level
STRH8N10N1
STRH8N10NG
-
TBD
Engineering
model
ESCC flight
Package
TO-39
Lead
finish
Gold
Mass
(g)
Temp. range
EPPL
-
1.2 -55 to 150°C
Target
Note:
Contact ST sales office for information about the specific conditions for product in die form
and for other packages.
November 2011
Doc ID 010029 Rev 2
1/18
www.st.com
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