STRH50P6FSY1 Datasheet, PDF (1/13 Pages) STMicroelectronics – P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET™ Power MOSFET

STRH50P6FSY1
STRH50P6FSY3
P-channel 60V - 0.047Ω - TO-254AA
Rad-hard low gate charge STripFET™ Power MOSFET
Features
Type
STRH50P6FSY1
STRH50P6FSY3
V_DSS
60 V
60 V
■ Low R_DS(on)
■ Fast switching
■ Single event effect (SEE) hardned
■ Low total gate charge
■ Light weight
■ 100% avalanche tested
■ Application oriented characterization
■ Hermetically sealed
■ Heavy ion SOA
■ 100 kRad TID
■ SEL & SEGR with 34Mev/cm²/mg LET ions
3
2
1
TO-254AA
Figure 1. Internal schematic diagram
Applications
■ Satellite
■ High reliability
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to sustain high TID
and provide immunity to heavy ion effects. It is
therefore suitable as power switch in mainly high-
efficiency DC-DC converters. It is also intended
for any application with low gate charge drive
requirements.
Table 1. Device summary
Order codes
Marking
STRH50P6FSY1 ⁽¹⁾
STRH50P6FSY3 ⁽²⁾
RH50P6FSY1
RH50P6FSY3
1. Mil temp range
2. Space flights parts (full ESCC flow screening)
November 2007
Rev 3
Package
TO-254AA
TO-254AA
Packaging
Individual strip pack
Individual strip pack
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