STRH40P10 Datasheet, PDF (1/18 Pages) STMicroelectronics – Rad-Hard P-channel 100 V, 34 A Power MOSFET

STRH40P10
Rad-Hard P-channel 100 V, 34 A Power MOSFET
Features
V_BDSS
100 V
I_D
34 A
R_DS(on)
0.060 Ohm
■ Fast switching
■ 100% avalanche tested
■ Hermetic package
■ 100 krad TID
■ SEE radiation hardened
Q_g
162 nC
Applications
■ Satellite
■ High reliability
Description
This P-channel Power MOSFET is developed with
STMicroelectronics unique STripFET™ process.
It has specifically been designed to sustain high
TID and provide immunity to heavy ion effects.
TO-254AA
3
2
1
Figure 1. Internal schematic diagram
D (1)
G (3)
SC06140p
S (2)
Table 1. Device summary
Part number
ESCC part
number
Quality
level
Package
Lead
finish
STRH40P10HY1
STRH40P10HYG
-
TBD
Engineering
model _TO-254AA
ESCC flight
Gold
Mass (g) Temp. range EPPL
-
10
-55 to 150°C
Target
Note:
Contact ST sales office for information about the specific conditions for product in die form
and for other packages.
November 2011
Doc ID 18354 Rev 6
1/18
www.st.com
18