STRH40N6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Rad-Hard N-channel 60 V, 30 A Power MOSFET

STRH40N6
Rad-Hard N-channel 60 V, 30 A Power MOSFET
Features
V_BDSS
60 V
I_D
30 A
R_DS(on)
36 mOhm
■ Fast switching
■ 100% avalanche tested
■ Hermetic package
■ 70 krad TID
■ SEE radiation hardened
Q_g
43 nC
Applications
■ Satellite
■ High reliability
Description
This N-channel Power MOSFET is developed with
STMicroelectronics unique STripFET™ process.
It has specifically been designed to sustain high
TID and provide immunity to heavy ion effects.
Datasheet — production data
SMD.5
Figure 1. Internal schematic diagram
Table 1. Device summary
Part numbers
ESCC part
number
Quality
level
Package
STRH40N6S1
STRH40N6SG
-
TBD
Engineering
model
ESCC flight
SMD.5
Lead
finish
Gold
Mass (g) Temp. range EPPL
-
2
-55 to 150°C
Target
Note:
Contact ST sales office for information about the specific conditions for tape and reel,
product in die form and other packages.
October 2012
This is information on a product in full production.
Doc ID 18351 Rev 5
1/16
www.st.com
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