STRH40N25FSY3 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET

Features
STRH40N25FSY3
N-channel 250V - 0.084Ω - TO-254AA
Rad-hard low gate charge STripFET™ Power MOSFET
PRELIMINARY DATA
Type
STRH40N25FSY3
V_DSS
250V
■ Low R_DS(on)
■ Fast switching
■ Single event effect (SEE) hardened
■ Low total gate charge
■ Light weight
■ 100% avalanche tested
■ Application oriented characterization
■ Hermetically sealed
■ Heavy ion SOA
■ 100kRad TID
■ SEL & SEGR with 34Mev/cm²/mg LET ions
TO-254AA
Internal schematic diagram
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to improve immunity to
space effect. It is therefore suitable as power
switch in mainly high-efficiency DC-DC converters
and Motor Control applications. It is also intended
for any application with low gate charge drive
requirements.
Applications
■ Satellite
■ High reliability applications
Order codes
Part number
STRH40N25FSY1⁽¹⁾
STRH40N25FSY3 ⁽²⁾
Marking
RH40N25FSY1
RH40N25FSY3
Package
TO-254AA
TO-254AA
Packaging
Individual strip pack
Individual strip pack
1. Mil temp range
2. Space flights parts (full ESA flow screening)
March 2007
Rev 2
1/13
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
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