STRH12P10ESY3 Datasheet, PDF (1/12 Pages) STMicroelectronics – Fast switching

STRH12P10ESY3
P-channel 100V - 0.265Ω - TO-257AA
Rad-hard low gate charge STripFET™ Power MOSFET
General features
Type
STRH12P10ESY3
V_DSS
100V
■ Low R_DS(on)
■ Fast switching
■ Single event effect (SEE) hardned
■ Low total gate charge
■ Light weight
■ 100% avalanche tested
■ Application oriented characterization
■ Hermetically sealed
■ Heavy ion SOA
■ 100kRad TID
■ SEL & SEGR with 34Mev/cm²/mg LET ions
TO-257AA
Internal schematic diagram
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to sustain high TID
and provide immunity to heavy ion effects. It is
therefore suitable as power switch in mainly high-
efficiency DC-DC converters. It is also intended
for any application with low gate charge drive
requirements.
Application
■ Satellite
■ High reliability
Order codes
Part number
STRH12P10ESY1 ⁽¹⁾
STRH12P10ESY3 ⁽²⁾
Marking
RH12P10ESY1
RH12P10ESY3
1. Mil temp range
2. Space flights parts (full ESA flow screening)
Package
TO-257AA
TO-257AA
Packaging
Individual strip pack
Individual strip pack
March 2007
Rev 2
1/12
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