STRH100N6 Datasheet, PDF (1/18 Pages) STMicroelectronics – Rad-Hard N-channel, 60 V, 80 A Power MOSFET

STRH100N6
Rad-Hard N-channel, 60 V, 80 A Power MOSFET
Features
V_DSS
60 V
I_D
80 A
R_DS(on)
12 mΩ
■ Fast switching
■ 100% avalanche tested
■ Hermetic package
■ 70 krad TID
■ SEE radiation hardened
Q_g
134.4 nC
Applications
■ Satellite
■ High reliability
Description
This N-channel Power MOSFET is developed with
STMicroelectronics unique STripFET™ process.
It has specifically been designed to sustain high
TID and provide immunity to heavy ion effects.
3
2
1
TO-254AA
Figure 1. Internal schematic diagram
Table 1. Device summary
Part numbers
ESCC part
number
STRH100N6HY1
-
STRH100N6HYG
TBD
Quality level
Engineering
model
ESCC flight
Package
TO-254AA
Lead
finish
Mass (g) Temp. range
EPPL
Gold
-
10 -55 to 150 °C
Target
Note:
Contact ST sales office for information about the specific conditions for product in die form
and for other packages.
November 2011
Doc ID 18353 Rev 3
1/18
www.st.com
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