STRH100N10 Datasheet, PDF (1/17 Pages) STMicroelectronics – Rad-Hard 100 V, 48 A N-channel Power MOSFET

STRH100N10
Rad-Hard 100 V, 48 A N-channel Power MOSFET
Features
V_BDSS
100 V
I_D
48 A
R_DS(on)
30 mOhm
■ Fast switching
■ 100% avalanche tested
■ Hermetic package
■ 70 krad TID
■ SEE radiation hardened
Q_g
135 nC
Applications
■ Satellite
■ High reliability
Description
This N-channel Power MOSFET is developed with
STMicroelectronics unique STripFET™ process.
It has specifically been designed to sustain high
TID and provide immunity to heavy ion effects.
This Power MOSFET is fully ESCC qualified.
TO-254AA
3
2
1
Figure 1. Internal schematic diagram
Table 1. Device summary
Part number
ESCC part
number
Quality
level
Package
Lead
finish
STRH100N10HY1
STRH100N10HY01
-
Engineering
model _TO-254AA
5205/021/01 ESCC flight
Gold
Mass (g) Temp. range EPPL
-
10
-55 to 150°C
Yes
Note:
Contact ST sales office for information about the specific conditions for product in die form
and for other packages.
November 2011
Doc ID 17486 Rev 6
1/17
www.st.com
17