STR2P3LLH6 Datasheet, PDF (1/12 Pages) STMicroelectronics – Very low on-resistance

STR2P3LLH6
P-channel 30 V, 0.048 Ω typ., 2 A STripFET™ H6 Power
MOSFET in a SOT-23 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max
ID
STR2P3LLH6 30 V 0.056 Ω @ 10 V 2 A
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Table 1: Device summary
Order codes Marking Package Packaging
STR2P3LLH6 2K3L SOT-23 Tape and reel
For the P-channel MOSFET the actual
polarity of the voltages and the current must
be reversed.
November 2014
DocID024613 Rev 2
This is information on a product in full production.
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