STR2N2VH5 Datasheet, PDF (1/13 Pages) STMicroelectronics – Low gate drive power loss

STR2N2VH5
N-channel 20 V, 0.025 Ω typ., 2.3 A STripFET™ H5
Power MOSFET in a SOT-23 package
Datasheet — production data
Features
3
2
1
SOT-23
Order code V_DS R_DS(on) max
I_D P_TOT
STR2N2VH5 20 V 0.03 Ω (V_GS=4.5 V) 2.3 A 0.35 W
• Low on-resistance R_DS(on)
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’ STripFET™
H5 technology. The device has been optimized to
achieve very low on-state resistance, contributing
to a FoM that is among the best in its class.
Order code
STR2N2VH5
Table 1. Device summary
Marking
Packages
STD1
SOT-23
Packaging
Tape and reel
July 2014
This is information on a product in full production.
DocID023799 Rev 4
1/13
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