STR1P2UH7 Datasheet, PDF (1/12 Pages) STMicroelectronics – Very low on-resistance

STR1P2UH7
P-channel 20 V, 0.087 Ω typ., 1.4 A STripFET™ H7
Power MOSFET in a SOT-23 package
Datasheet - production data
Figure 1: Internal schematic diagram
D (3)
G (1)
Features
Order code
STR1P2UH7
VDS
20 V
RDS(on) max
0.1 Ω @ 4.5
ID
1.4 A
 Very low on-resistance
 Very low capacitance and gate charge
 High avalanche ruggedness
Applications
 Switching applications
Description
This P-channel Power MOSFET utilizes the
STripFET H7 technology with a trench gate
structure combined with extremely low on-
resistance. The device also offers ultra-low
capacitances for higher switching frequency
operations.
Order code
STR1P2UH7
S (2)
Table 1: Device summary
Marking
Package
1L2U
SOT-23
Packaging
Tape and reel
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be
reversed.
June 2015
DocID025025 Rev 3
This is information on a product in full production.
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