STQ3N45K3-AP Datasheet, PDF (1/14 Pages) STMicroelectronics – Very low intrinsic capacitance

STQ3N45K3-AP
N-channel 450 V - 3.3 Ω typ., 0.6 A Zener-protected,
SuperMESH3™ Power MOSFET in a TO-92 package
Datasheet - production data
Features
3
2
1
TO-92
Figure 1. Internal schematic diagram
'
*
6
AM01476v1
Order code
V_DSS
STQ3N45K3-AP 450 V
R_DS(on)
max
<4Ω
I_D P_w
0.6 A 3 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• Switching applications
Description
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
This device boasts an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering it suitable for
the most demanding applications.
Order code
STQ3N45K3-AP
Table 1. Device summary
Marking
Package
3N45K3
TO-92
June 2013
This is information on a product in full production.
DocID024887 Rev 1
Packaging
Ammopak
1/14
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