STQ2LN60K3-AP Datasheet, PDF (1/13 Pages) STMicroelectronics – Very low intrinsic capacitance

STQ2LN60K3-AP
N-channel 600 V, 4 Ω typ., 0.6 A MDmesh™ K3
Power MOSFET in a TO-92 package
Datasheet - production data
Features
Order code
VDS
STQ2LN60K3-AP 600 V
RDS(on)
max
4.5 Ω
ID
PTOT
0.6 A 2.5 W
3
2
1
TO-92 ammopack
Figure 1: Internal schematic diagram
D(2)
G(1)
 100% avalanche tested
 Extremely high dv/dt capability
 Very low intrinsic capacitance
 Improved diode reverse recovery
characteristics
 Zener-protected
Applications
 Switching applications
Description
This MDmesh™ K3 Power MOSFET is the result
of improvements applied to STMicroelectronics’
MDmesh™ technology, combined with a new
optimized vertical structure. This device boasts
an extremely low on-resistance, superior dynamic
performance and high avalanche capability,
rendering it suitable for the most demanding
applications.
S(3)
Order code
STQ2LN60K3-AP
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
2LN60K3
TO-92
Packaging
Ammopack
February 2017
DocID023499 Rev 3
This is information on a product in full production.
1/13
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