STQ1NE10L Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET™ POWER MOSFET

STQ1NE10L
N-CHANNEL 100V - 0.3 Ω - 1A TO-92
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STQ1NE10L
100 V
<0.4 Ω
1A
s TYPICAL R_DS(on) = 0.3 Ω
s EXCEPTIONAL HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s AVALANCHE RUGGED TECHNOLOGY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
TO-92
TO-92
(Ammopack)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot⁽¹⁾
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽²⁾ Peak Diode Recovery voltage slope
E_AS ⁽³⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(1) _{Related to Rthj -l}
December 2002
.
Value
Unit
100
V
100
V
± 16
V
1
A
0.6
A
4
A
3
W
0.025
W/°C
6
V/ns
400
mJ
°C
-55 to 150
°C
(2) I_SD ≤1A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(3) Starting Tj = 25 ^oC, ID = 1A, VDD = 50V
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