|
STQ1HNC60 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 600V - 7ohm - 0.4A TO-92 PowerMesh™II MOSFET | |||
|
STQ1HNC60
N-CHANNEL 600V - 7⦠- 0.4A TO-92
PowerMeshâ¢II MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STQ1HNC60
600 V
<8â¦
0.4 A
s TYPICAL RDS(on) = 7 â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAYâ¢II
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Companyâs proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
TO-92
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE LOW POWER SUPPIES
(SMPS)
s CFL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
August 2001
Value
Unit
600
V
600
V
± 30
V
0.4
A
0.25
A
1.6
A
3.5
W
0.028
W/°C
3.5
V/ns
â65 to 150
°C
150
°C
(1)ISD ⤠0.4 A, di/dt â¤100A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX.
1/6
|
▷ |