STQ1HN60K3-AP Datasheet, PDF (1/14 Pages) STMicroelectronics – Gate charge minimized

STQ1HN60K3-AP
N-channel 600 V, 6.7 Ω typ., 0.4 A SuperMESH3™ Power MOSFET
in a TO-92 package
Datasheet − production data
3
2
1
TO-92
Figure 1. Internal schematic diagram
D(2)
Features
Order code
V_DS
STQ1HN60K3-AP 600 V
R_DS(on)
max
8Ω
I_D P_TOT
0.4 A 3 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• Switching applications
G(1)
S(3)
AM01476v1
Description
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
This device boasts an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering it suitable for
the most demanding applications.
Order code
STQ1HN60K3-AP
Table 1. Device summary
Marking
Package
1HN60K3
TO-92
Packaging
Ammopack
April 2013
This is information on a product in full production.
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