STPSC8TH13TI Datasheet, PDF (1/8 Pages) STMicroelectronics – Dual 650 V power Schottky silicon carbide diode in series

STPSC8TH13TI
Dual 650 V power Schottky silicon carbide diode in series






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Features
 No or negligible reverse recovery
 Switching behavior independent of
temperature
 Suited for specific bridge-less topologies
 High forward surge capability
 Insulated package:
– Capacitance: 7 pF
– Insulated voltage: 2500 V rms
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in specific bridge-less
topologies, this dual 650 V rectifier will boost the
performance in hard switching conditions. Its high
forward surge capability ensures a good
robustness during transient phases.
.
Table 1. Device summary (per diode)
Symbol
Value
I_F(AV)
V_RRM
T_j (max.)
8A
650 V
175 °C
January 2016
This is information on a product in full production.
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