STPSC8H065D Datasheet, PDF (1/14 Pages) STMicroelectronics – 650 V power Schottky silicon carbide diode

STPSC8H065
650 V power Schottky silicon carbide diode
A
K
K
A
K
A
K
TO-220AC TO-220AC Ins
STPSC8H065D STPSC8H065DI
K
K
A
NC
DPAK
A
NC
D2PAK
STPSC8H065B-TR STPSC8H065G-TR
Features
• No reverse recovery charge in application
current range
• Switching behavior independent of
temperature
• High forward surge capability
• Insulated package TO-220AC Ins:
– Insulated voltage: 2500 V rms
– Typical package capacitance: 7 pF
Datasheet − production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1. Device summary
Symbol
Value
I_F(AV)
V_RRM
T_j (max)
8A
650 V
175 °C
January 2014
This is information on a product in full production.
DocID023603 Rev 4
1/14
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