STPSC8H065C Datasheet, PDF (1/8 Pages) STMicroelectronics – High forward surge capability

STPSC8H065C
650 V power Schottky silicon carbide diode
A1
K
A2
A2
A1 ^K
TO-220AB
STPSC8H065CT
Features
 No or negligible reverse recovery
 Switching behavior independent of
temperature
 High forward surge capability
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimized
capacitive charge at turn-off behavior is
independent of temperature.
Especially suited for use in interleaved or bridge-
less topologies, this dual-diode rectifier will boost
the performance in hard switching conditions. Its
high forward surge capability ensures a good
robustness during transient phases.
Table 1. Device summary
Symbol
Value
I_F(AV)
V_RRM
T_j (max)
2x4A
650 V
175 °C
November 2013
This is information on a product in full production.
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